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IL211A/212A/213A
N EW
PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
FEATURES * High Current Transfer Ratio IL211A--20% Minimum IL212A--50% Minimum IL213A--100% Minimum * Isolation Voltage, 2500 VACRMS * Electrical Specifications Similar to Standard 6 Pin Coupler * Industry Standard SOIC-8 Surface Mountable Package * Standard Lead Spacing, .05" * Available in Tape and Reel Option (Conforms to EIA Standard RS481A) * Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering * Underwriters Lab File #E52744 (Code Letter P) DESCRIPTION The IL211A/212A/213A are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL211A//212A/213A comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A choice of 20, 50, and 100% minimum CTR at IF=10 mA makes these optocouplers suitable for a variety of different applications. Maximum Ratings Emitter Peak Reverse Voltage .....................................6.0 V Continuous Forward Current .........................60 mA Power Dissipation at 25C............................90 mW Derate Linearly from 25C......................1.2 mW/C Detector Collector-Emitter Breakdown Voltage...............30 V Emitter-Collector Breakdown Voltage.................7 V Collector-Base Breakdown Voltage..................70 V Power Dissipation ......................................150 mW Derate Linearly from 25C2.0 mW/C Package Total Package Dissipation at 25C Ambient (LED + Detector) ....................................280 mW Derate Linearly from 25C......................3.3 mW/C Storage Temperature ...................-55C to +150C Operating Temperature ...............-55C to +100C Soldering Time at 260C ............................. 10 sec.
Dimensions in inches (mm) .120.005 (3.05.13) .240 (6.10) Pin One ID .192.005 (4.88.13) .004 (.10) .008 (.20) .050 (1.27) typ. .021 (.53) Anode 1 .154.005 Cathode 2 C L (3.91.13) NC 3 NC 4 .016 (.41) .015.002 (.38.05) .008 (.20) 40 8 7 6 5 NC Base Collector Emitter
7 .058.005 (1.49.13) .125.005 (3.18.13) Lead Coplanarity .0015 (.04) max.
5 max. R.010 (.25) max.
.020.004 (.15.10) 2 plcs.
Characteristics (TA=25C)
Symbol Emitter Forward Voltage Reverse Current Capacitance Detector Breakdown Voltage Dark Current, Collector-Emitter Capacitance, Collector-Emitter Package DC Current Transfer Ratio IL211A IL212A IL213A Saturation Voltage, Collector-Emitter Isolation Test Voltage Capacitance, Input toOutput Resistance, Input to Output Switching Time CTRDC 20 50 100 VCEsat VIO CIO RIO ton,toff 2500 0.5 100 3.0 50 80 130 0.4 VACRMS pF G s IC=2 mA, RE=100 , VCE=10 V % IF=10 mA, VCE=5 V BVCEO BVECO ICEOdark CCE 30 7 5 10 50 V V nA pF IC=10 A IE=10 A VCE=10 V IF=0 VCE=0 VF IR CO 1.3 0.1 25 1.5 100 V A pF IF=10 mA VR=6.0 V VR=0 Min. Typ. Max. Unit Condition
IF=10 mA, IC=2.0 mA
5-1
Figure 1. Forward voltage versus forward current
1.4 Vf-Forward Voltage - V 1.3 1.2 1.1 1.0 0.9 Ta = 100C 0.8 0.7 .1 1 10 If- Forward Current - mA 100 Ta = 25C Ta = -55C
Figure 5. Normalized collector-base photocurrent versus LED current
10
NIcb - Normalized Icb
1
Normalized to: Vcb = 9.3 V IF = 10 mA Ta = 25 C
.1
.01 .1
1 10 IF - LED Current - mA
100
Figure 2. Normalized non-saturated and saturated CTRce versus LED current
1.5
Figure 6. Collector-base photocurrent versus LED current
1000 T = 25C a
Icb - Collector-base Current - A
NCTRce - Normalized CTRce
1.0
Normalized to: Vce = 10 V IF = 10 mA Ta = 25 C
Vce = 5 V
100 10 1 .1 .1
Vcb = 9.3 V
0.5 Vce = 0.4 V 0.0 .1 1 10 100 IF - LED Current - mA
1
10
100
I F - LED Current - mA
Figure 3. Collector-emitter current versus LED current
150 Ta = 25C Vce = 10 V 100
Figure 7. Collector-emitter leakage current versus temperature g p
Iceo - Collector-Emitter - nA
10 10 5 4
Ice - Collector-emitter Current - mA
103 102 101 100 10-1 10-2 -20 0 20 40 60 80 100 Ta - Ambient Temperature - C Vce = 10V TYPICAL
50 Vce = 0.4 V 0 .1 1 10 IF - LED Current - mA 100
Figure 4. Normalized collector-base photocurrent versus LED current
Figure 8. Normalized saturated HFE versus base current and temperature
2.0
NHFE(sat) - Normalized Saturated HFE
100
NIcb - Normalized Icb
10
Normalized to: Vcb = 9.3 V IF = 1 mA Ta = 25 C
70C 50C 25C
1.5 1.0
Normalized to: Ib = 20A Vce = 10 V Ta = 25 C
1
Vce = 0.4 V 0.5 0.0 1 10 100 Ib - Base Current - A 1000
.1 .1 1 10 IF - LED Current - mA 100
IL211A/212A/213A
5-2
Figure 9. Typical switching characteristics versus base resistance (saturated operation)
100
Figure 10. Typical switching times versus load resistance
1000 Input: 500 IF=10 mA Pulse width=100 mS Duty cycle=50% 100 50 10 5 1
Switching time (S)
Switching time (s)
Input: IF =10mA 50 Pulse width=100 mS Duty cycle=50%
F T OF
TO
FF
10 5
TON
TON
1.0 10K 50K 100K 500K 1M
0.1
0.5 1
5
10
50 100
Load resistance RL (K)
Base-emitter resistance, RBE ()
IL211A/212A/213A
5-3

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